? AUIRFR2405 v dss 55v r ds(on) typ. 11.8m ?? i d (silicon limited) 56a ? max. 16m ?? i d (package limited) 30a features ? advanced planar technology ? dynamic dv/dt rating ? low on-resistance ? 175c operating temperature ? fast switching ? fully avalanche rated ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for automotive applications, this stripe planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. 1 2015-11-19 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 56 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 40 ? i dm pulsed drain current ? 220 p d @t c = 25c maximum power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 130 mj i ar avalanche current ? 34 a e ar repetitive avalanche energy ? 11 mj dv/dt pead diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 30 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 1.4 c/w r ? ja junction-to-ambient ( pcb mount) ? ??? 50 r ? ja junction-to-ambient ??? 110 d-pak AUIRFR2405 base part number package type standard pack orderable part number form quantity AUIRFR2405 d-pak tube 75 AUIRFR2405 tape and reel left 3000 AUIRFR2405trl g d s gate drain source s g d hexfet ? power mosfet
? AUIRFR2405 2 2015-11-19 notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? v dd = 25v, starting t j = 25c, l = 0.22mh, r g = 25 ? , i as = 34a ? i sd ?? 34a, di/dt ?? 190a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 300s; duty cycle ? 2%. ?? c oss eff . is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ?? calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. ? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 . ? r ? is measured at t j approximately 90c. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.052 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 11.8 16 m ???? v gs = 10v, i d = 34a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a gfs forward trans conductance 30 ??? ??? s v ds = 25v, i d = 34a ? i dss drain-to-source leakage current ??? ??? 20 a v ds = 55 v, v gs = 0v ??? ??? 250 v ds = 44v,v gs = 0v,t j =150c i gss gate-to-source forward leakage ??? ??? 200 na v gs = 20v gate-to-source reverse leakage ??? ??? -200 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 70 110 nc ? i d = 34a q gs gate-to-source charge ??? 16 23 v ds = 44v q gd gate-to-drain charge ??? 19 29 v gs = 10v ? t d(on) turn-on delay time ??? 15 ??? ns v dd = 28v t r rise time ??? 130 ??? i d = 34a t d(off) turn-off delay time ??? 55 ??? r g = 6.8 ?? t f fall time ??? 78 ??? v gs = 10v ? l d internal drain inductance ??? 4.5 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 2430 ??? pf ? v gs = 0v c oss output capacitance ??? 470 ??? v ds = 25v c rss reverse transfer capacitance ??? 100 ??? ? = 1.0mhz, see fig. 5 diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 56 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 220 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 34a,v gs = 0v ?? t rr reverse recovery time ??? 62 93 ns t j = 25c ,i f = 34a q rr reverse recovery charge ??? 170 260 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) c oss output capacitance ??? 2040 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss eff. effective output capacitance ??? 350 ??? v gs = 0v, v ds = 0v to 44v c oss output capacitance ??? 350 ??? v gs = 0v, v ds = 44v, ? = 1.0mhz
? AUIRFR2405 3 2015-11-19 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 56a
? AUIRFR2405 4 2015-11-19 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 1 10 100 0 800 1600 2400 3200 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 34a v = 11v ds v = 27v ds v = 44v ds 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
? AUIRFR2405 5 2015-11-19 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 not es : 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
? AUIRFR2405 6 2015-11-19 ? fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 13b. gate charge test circuit fig 13a. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 14a 24a 34a
? AUIRFR2405 7 2015-11-19 ? fig 14. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets
? AUIRFR2405 8 2015-11-19 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline (dimensions are shown in millimeters (inches)) ywwa xx ? xx date code y= year ww= work week aufr2405 lot code part number ir logo d-pak (to-252aa) part marking information
? AUIRFR2405 9 2015-11-19 d-pak (to-252aa) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
? AUIRFR2405 10 2015-11-19 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. d-pak msl1 i-pak esd machine model class m4 (+/-500v) ? aec-q101-002 human body model ? class h1c (+/-2000v) ? aec-q101-001 charged device model class c5 (+/-2000v) ? aec-q101-005 rohs compliant yes moisture sensitivity level ? published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 11/19/15 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. ? highest passing voltage.
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